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November 2013
IRFW630B
N-Channel MOSFET
2 00 V, 9 A, 40 0 mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.This advanced technology
has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for
high efficiency switching DC/DC converters, switch
mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
? 9.0 A, 2 00 V, R DS(on) = 400 mΩ (Max.) @ V GS = 10 V,
I D = 4. 5 A
? Low Gate Charge (Typ. 22 nC)
? Low C rss (Typ. 22 pF)
? 100% Avalanche Tested
D
D
G
S
D 2 -PAK
G
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
S
Symbol
V DSS
Drain-Source Voltage
Parameter
IRFW630BTM_FP001
2 00
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
9.0
5.7
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
36
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
160
9.0
7.2
5.5
mJ
A
mJ
V/ns
P D
Power Dissipation
Power Dissipation
(T A = 25 ° C) *
(T C = 25 ° C)
- Derate above 25 ° C
3.13
72
0.57
W
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient ( Min. P ad of 2 - oz C opper), Max.
Thermal Resistance, Junction to Ambient ( * 1 in 2 P ad of 2 - oz C opper), Max.
IRFW630BTM_FP001
1.74
62.5
40
Unit
o C/W
?200 2 Fairchild Semiconductor Corporation
IRFW630B Rev. C1
1
www.fairchildsemi.com
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